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1

Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy

Poblenz, C., Waltereit, P., Speck, J. S.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2005

Language:

english

File:

PDF, 696 KB

english, 2005

2

Next generation defect characterization in nitride HEMTs

A. R. Arehart, A. C. Malonis, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 269 KB

english, 2011

3

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

Poblenz, C., Waltereit, P., Rajan, S., Mishra, U. K., Speck, J. S., Chin, P., Smorchkova, I., Heying, B.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

4

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Poblenz, C., Waltereit, P., Rajan, S., Heikman, S., Mishra, U. K., Speck, J. S.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2004

Language:

english

File:

PDF, 378 KB

english, 2004

5

High-power AlGaN/GaN HEMTs for Ka-band applications

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. Denbaars, J. Speck, U. Mishra

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

6

[IEEE 2009 74th ARFTG Microwave Measurement Conference - Broomfield, CO, USA (2009.11.30-2009.12.4)] 2009 74th ARFTG Microwave Measurement Conference - Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source

Suh, Inwon, Roblin, Patrick, Ko, Youngseo, Yang, Chieh-Kai, Malonis, Andrew, Arehart, Aaron, Ringel, Steven, Poblenz, Christiane, Pei, Yi, Speck, James, Mishra, Umesh

Year:

2009

Language:

english

File:

PDF, 861 KB

english, 2009

7

[IEEE 2009 IEEE MTT-S International Microwave Symposium Digest (MTT) - Boston, MA, USA (2009.06.7-2009.06.12)] 2009 IEEE MTT-S International Microwave Symposium Digest - Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system

Yang, Chieh-Kai, Roblin, Patrick, Malonis, Andrew, Arehart, Aaron, Ringel, Steven, Poblenz, Christiane, Yi Pei,, Speck, James, Mishra, Umesh

Year:

2009

Language:

english

File:

PDF, 281 KB

english, 2009

8

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF 4 -Treatment

Chu, Rongming, Poblenz, Christiane, Wong, Man Hoi, Dasgupta, Sansaptak, Rajan, Siddharth, Pei, Yi, Recht, Felix, Shen, Likun, Speck, James S., Mishra, Umesh K.

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 120 KB

english, 2008

9

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Novel In-Plane Semiconductor Lasers XVI - Advances in semipolar InGaN laser diodes (Conference Presentation)

Belyanin, Alexey A., Smowton, Peter M., McLaurin, Mel, Raring, James, Poblenz, Christiane, Rudy, Paul, Aigeldinger, Georg, Goutain, Eric, Huang, Hua

Year:

2017

Language:

english

File:

PDF, 109 KB

english, 2017

10

Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

J. Brown, C. Elsass, C. Poblenz, P.M. Petroff, I.S. Speck

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

11

Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy

A. Corrion, F. Wu, T. Mates, C.S. Gallinat, C. Poblenz, J.S. Speck

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 433 KB

english, 2006

12

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

C.R. Elsass, C. Poblenz, B. Heying, P. Fini, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 249 KB

english, 2001

13

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

E Haus, I.P Smorchkova, B Heying, P Fini, C Poblenz, T Mates, U.K Mishra, J.S Speck

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 1.72 MB

english, 2002

14

Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy

A. Armstrong, C. Poblenz, U. K. Mishra, J. S. Speck, S. A. Ringel

Journal:

physica status solidi (b)

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

15

Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

A. Armstrong, A. Corrion, C. Poblenz, U. K. Mishra, J. S. Speck, S. A. Ringel

Journal:

physica status solidi (b)

Year:

2007

Language:

english

File:

PDF, 60 KB

english, 2007

16

Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy

Hitoshi Sato, Patrick Waltereit, Daniel S. Green, Christiane Poblenz, Thomas Katona, Steven P. DenBaars, James S. Speck, Hitoshi Tamura, Chihiro Funaoka

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 87 KB

english, 2003

17

Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films

A. R. Arehart, A. Corrion, C. Poblenz, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 205 KB

english, 2008

18

Internal Psychometric Properties of the Children with Special Health Care Needs Screener

Adam C. Carle, Stephen J. Blumberg, Charlie Poblenz

Journal:

Academic Pediatrics

Year:

2011

Language:

english

File:

PDF, 261 KB

english, 2011

19

Calcium Overload Triggers Rod Photoreceptor Apoptotic Cell Death in Chemical-Induced and Inherited Retinal Degenerations

DONALD A. FOX, ANN T. POBLENZ, LIHUA HE

Journal:

Annals of the New York Academy of Sciences

Year:

1999

Language:

english

File:

PDF, 169 KB

english, 1999

20

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 155 KB

english, 2006

21

Total Dose Response of STL and I2L Logic Devices

Poblenz, F. W., Carroll, R. G., Whitmire, D. A., Cheney, B. W., Walthall, D. L.

Journal:

IEEE Transactions on Nuclear Science

Year:

1982

Language:

english

File:

PDF, 1.03 MB

english, 1982

22

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Poblenz, C., Corrion, A.L., Recht, F., Chang Soo Suh, Chu, R., Shen, L., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 106 KB

english, 2007

23

Inhibition of RANKL-mediated osteoclast differentiation by selective TRAF6 decoy peptides

Ann T. Poblenz, Joerg J. Jacoby, Sujay Singh, Bryant G. Darnay

Journal:

Biochemical and Biophysical Research Communications

Year:

2007

Language:

english

File:

PDF, 656 KB

english, 2007

24

Lead-induced Alterations in Gene Expression and Activity of Retinal cGMP PDE Results in Calcium Overload and Rod-selective Apoptosis

D.A Fox, D Srivastava, A Poblenz, L He

Journal:

Toxicology in Vitro

Year:

1998

Language:

english

File:

PDF, 88 KB

english, 1998

25

Analysis of Transistor Failure in a Nuclear Environment

Poblenz, Frank W.

Journal:

IEEE Transactions on Nuclear Science

Year:

1963

Language:

english

File:

PDF, 737 KB

english, 1963

26

Radiation Tolerant Magnetic Amplifier

Frank, M., Poblenz, F. W., Howard, D. W.

Journal:

IEEE Transactions on Nuclear Science

Year:

1963

Language:

english

File:

PDF, 2.74 MB

english, 1963

27

Application of Silicon Damage to Neutron Exposure Measurement

Poblenz, F. W., Taulbee, C. D., Walker, R. L.

Journal:

IEEE Transactions on Nuclear Science

Year:

1967

Language:

english

File:

PDF, 1018 KB

english, 1967

28

Lead-induced alterations in retinal cGMP phosphodiesterase trigger calcium overload, mitochondrial dysfunction and rod photoreceptor apoptosis

Donald A Fox, Lihua He, Ann T Poblenz, Carlos J Medrano, Yvonne S Blocker, Devesh Srivastava

Journal:

Toxicology Letters

Year:

1998

Language:

english

File:

PDF, 65 KB

english, 1998

29

S15/L2 - Lead-induced alterations in retinal cGMP PDE gene expression and activity result in cell-specific apoptosis during development

D.A. Fox, D. Srivastava, A.T. Poblenz, L. He

Journal:

Toxicology Letters

Year:

1998

Language:

english

File:

PDF, 140 KB

english, 1998

30

[IEEE 2007 IEEE/MTT-S International Microwave Symposium - Honolulu, HI, USA (2007.06.3-2007.06.8)] 2007 IEEE/MTT-S International Microwave Symposium - Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

Shen, L., Pei, Y., McCarthy, L., Poblenz, C., Corrion, A., Fichtenbaum, N., Keller, S., Denbaars, S. P., Speck, J. S., Mishra, U. K.

Year:

2007

Language:

english

File:

PDF, 2.57 MB

english, 2007

31

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Akopian, N., Vardi, A., Bahir, G., Garber, V., Ehrenfreund, E., Gershoni, D., Poblenz, C., Elsass, C. R., Smorchkova, I. P., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 442 KB

english, 2009

32

MBE-Grown AlGaN/GaN HEMTs on SiC

RAJAN, SIDDHARTH, CHAKRABORTY, ARPAN, MISHRA, UMESH K., POBLENZ, CHRISTIANE, WALTEREIT, PATRICK, SPECK, JAMES S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 326 KB

english, 2004

33

Measurement of polarization charge and conduction-band offset at In[sub x]Ga[sub 1âx]N/GaN heterojunction interfaces

Zhang, H., Miller, E. J., Yu, E. T., Poblenz, C., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 410 KB

english, 2004

34

Current-induced spin polarization in gallium nitride

Koehl, W. F., Wong, M. H., Poblenz, C., Swenson, B., Mishra, U. K., Speck, J. S., Awschalom, D. D.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

35

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates

Raring, James W., Schmidt, Mathew C., Poblenz, Christiane, Li, Ben, Chang, Yu-Chia, Mondry, Mark J., Lin, You-Da, Krames, Michael R., Craig, Richard, Speck, James S., DenBaars, Steven P., Nakamura, Sh

Year:

2011

Language:

english

File:

PDF, 639 KB

english, 2011

36

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

Shen, L., Palacios, T., Poblenz, C., Corrion, A., Chakraborty, A., Fichtenbaum, N., Keller, S., Denbaars, S.P., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

37

Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Chieh Kai Yang,, Roblin, Patrick, De Groote, Fabien, Ringel, Steven A, Rajan, Siddharth, Teyssier, Jean Pierre, Poblenz, Christiane, Yi Pei,, Speck, James, Mishra, Umesh K

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2010

Language:

english

File:

PDF, 1.52 MB

english, 2010

38

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

A. L. Corrion, C. Poblenz, F. Wu, J. S. Speck

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 847 KB

english, 2008

39

Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes

Melo, T, Hu, Y-L, Weisbuch, C, Schmidt, M C, David, A, Ellis, B, Poblenz, C, Lin, Y-D, Krames, M R, Raring, J W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.85 MB

english, 2012

40

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE

Pei, Y., Suh, C., Chu, R., Recht, F., Shen, L., Corrion, A., Poblenz, C., Speck, J., Mishra, U.K.

Year:

2007

Language:

english

File:

PDF, 917 KB

english, 2007

41

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

Rajan, S., Waltereit, P., Poblenz, C., Heikman, S.J., Green, D.S., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 150 KB

english, 2004

42

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Waltereit, Patrick, Poblenz, Christiane, Rajan, Siddharth, Wu, Feng, Mishra, Umesh K., Speck, James S.

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

43

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

Suh, C., Chini, A., Fu, Y., Poblenz, C., Speck, J., Mishra, U.

Year:

2006

Language:

english

File:

PDF, 1.67 MB

english, 2006

44

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - MBE-Grown AlGaN/GaN HEMTs on SiC

Rajan, S., Chakraborty, A., Mishra, U.K., Poblenz, C., Waltereit, P., Speck, J.S.

Year:

2004

Language:

english

File:

PDF, 1.45 MB

english, 2004

45

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

Shen, L., McCarthy, L., Palacios, T., Wong, M.h., Poblenz, C., Corrion, A., Keller, S., DenBaars, S., Speck, J., Mishra, U.

Year:

2006

Language:

english

File:

PDF, 1.93 MB

english, 2006

46

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts

Recht, F., McCarthy, L., Shen, L., Poblenz, C., Corrion, A., Speck, J. S., Mishra, U. K.

Year:

2007

Language:

english

File:

PDF, 497 KB

english, 2007

47

Single-Dose and Steady-State Pharmacokinetics of Tenofovir Disoproxil Fumarate in Human Immunodeficiency Virus-Infected Children

Hazra, R., Balis, F. M., Tullio, A. N., DeCarlo, E., Worrell, C. J., Steinberg, S. M., Flaherty, J. F., Yale, K., Poblenz, M., Kearney, B. P., Zhong, L., Coakley, D. F., Blanche, S., Bresson, J. L., Z

Journal:

Antimicrobial Agents and Chemotherapy

Year:

2004

Language:

english

File:

PDF, 190 KB

english, 2004

48

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

Chu, Rongming, Shen, Likun, Fichtenbaum, Nick, Keller, Stacia, Corrion, Andrea, Poblenz, Christiane, Speck, James, Mishra, Umesh

Year:

2007

Language:

english

File:

PDF, 348 KB

english, 2007

49

Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy

Poblenz, C., Mates, T., Craven, M., DenBaars, S. P., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 320 KB

english, 2002

50

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

Armstrong, A., Poblenz, C., Green, D. S., Mishra, U. K., Speck, J. S., Ringel, S. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 448 KB

english, 2006

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